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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1562 DESCRIPTION *High DC Current Gain: hFE= 300~1000@ (VCE= -5V , IC= -0.5A) *Low Saturation Voltage: VCE(sat)= -0.5V(TYP.)@ (IC= -2A, IB= -20mA) B APPLICATIONS *Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO IC Emitter-Base Voltage -7 V Collector Current-Continuous -3 A ICM Collector Current-Pulse -6 A IB B Base Current-Continuous Collector Power Dissipation @TC=25 -0.6 A 25 W PC Collector Power Dissipation @Ta=25 TJ Tstg Junction Temperature 2 150 Storage Temperature -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SB1562 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -60 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -20mA B -0.5 -1.5 V VBE(on) Base-Emitter On Voltage IC= -0.5A ; VCE= -5V -0.7 -1.0 V A ICBO Collector Cutoff Current VCB= -60V ; IE=0 -100 IEBO Emitter Cutoff Current VEB= -7V; IC=0 -100 A hFE-1 DC Current Gain IC= -0.5A ; VCE= -5V 300 1000 hFE-2 DC Current Gain IC= -2A ; VCE= -5V 100 COB Output Capacitance IE=0 ; VCB= -10V;ftest= 1.0MHz 60 pF isc Websitewww.iscsemi.cn 2 |
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